Method for producing beam-shaping diaphragms for lithographic devices

摘要

Methods for producing beam shaping diaphragms for lithographic devices in which a silicon layer is epitaxially deposited on a semiconductor body and the epitaxial layer is formed in the central region as a self-supporting membrane and is formed with preferably straight line-shaped quadratic recesses which have perpendicular limiting surfaces. Photolithographic processes and galvanic second-casting techniques may be used in the process for producing the beam-shaping diaphragm. The beam-shaping diaphragm can also be produced in lightly doped epitaxial layers by using electro-chemical etching methods.