| 摘要 |
A semiconductor diode monolithically integrated onto a power MOS transistor or power IGBT for temperature sensing. With the application of a positive bias and a constant current, the diode provides a voltage that varies linearly as a function of temperature for the power transistor. The diode is constructed in such a manner so as to prevent latch-up (i.e. where a parasite silicon controlled rectifiers is turned on, locking the power transistor in an on condition) and voltage breakdown (i.e. where the diode malfunctions from excessive voltage).
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