发明名称 |
Multi-layered interconnection structure for a semiconductor device |
摘要 |
An interconnection layer of a semiconductor device according to the present invention has in a contact portion with a conductor layer a multi-layered structure formed from the bottom, of a refractory metal silicide layer, a first refractory metal nitride layer, and a second refractory metal nitride layer. Titanium or tungsten is used as a refractory metal. The second refractory metal nitride is formed by thermally nitriding the refractory metal layer. The second refractory metal nitride layer formed by the thermal process has a close packed crystal structure and has an excellent barrier characteristic.
|
申请公布号 |
US5049975(A) |
申请公布日期 |
1991.09.17 |
申请号 |
US19900492032 |
申请日期 |
1990.03.12 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
AJIKA, NATSUO;ARIMA, HIDEAKI |
分类号 |
H01L21/3205;H01L21/28;H01L21/285;H01L21/321;H01L21/768;H01L23/52;H01L23/532;H01L29/43;H01L29/45 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|