| 摘要 |
<p>PURPOSE:To effectively utilize or discharge the residual charge of a wafer so as to facilitate the secession of the wafer by providing a high voltage power source with a polarity changeover means, and applying positive or negative voltages to electrodes or applying homopolar voltage to the residual charge of a wafer. CONSTITUTION:When the polarity changeover means 2f and 2g change over the positive/negative poles of respective high voltage power sources 2a and 2b between output terminals 2c and 2d and an earth terminal 2e to suck a wafer 6 with an electrostatic chuck 1, the voltage is applied so that for example an electrode 1b may be positive and an electrode 1c negative. Taking the case the that the wafer 6 is RIE-processed, the wafer 6 is charged in negative, bathed in the shower of electrons being charge particles, and negative residual charge 7a stand at the surface of the wafer 6. Thereupon, negative voltage is applied to two electrodes 1b and 1c by changing over the polarity changeover means 2f and 2g. The negative charge induced in the insulating film 1a of an electrostatic chuck 1 and the residual charge 7a of the wafer 7a repel each other with Coulomb repulsive forces functioning, so the wafer 6 can easily secede.</p> |
