| 摘要 |
A method for eutectically attaching a silicon chip to a gold-coated substrate. Prior to heating and scrubbing of the silicon chip against the gold surface, a gold lattice structure is placed between the silicon chip bottom surface and the gold surface. The gold lattice structure contacts the silicon chip bottom surface over an area equal to less than ten percent of the total surface area of the chip bottom surface. The point source contact between the gold lattice and silicon chip promotes formation of the gold/silicon eutectic alloy at temperatures of between 400 DEG to 475 DEG C. The gold/silicon eutectic alloy spreads between the silicon chip bottom surface and gold top surface to provide eutectic bonding. The method is especially useful in bonding relatively large silicon chips or dies to gold-coated substrates wherein the bottom surface or back side of the chip is not coated with a protective metal layer. |
