| 摘要 |
PURPOSE: To provide a superconductor device, which is constituted of source and drain regions composed of oxide superconducting materials on a substrate, interposing an insulator area between these areas and mutually connecting the source and drain areas with a transport thin film, composed of an oxide conductive material inbetween, and a producing method. CONSTITUTION: A transport thin film 16 is produced from the oxide super- conducting material by a burning treatment in a reducing atmosphere, and source and drain areas 12 and 13 required to exhibit superconductivity during the operation of this device are protected with a noble metal thin film 15 during the burning. The superconducting device can be provided with a transistor element having an exactly formed fine dimension, while permitting no intermediate thin film which is unwanted for an interface between the various regions of this transistor element to exit. |
