| 摘要 |
PURPOSE:To form patterns having excellent heat resistance and image contrast and to obviate the generation of scum after development by compounding a specific compd. with a compsn. consisting of an alkaline-soluble novolak resin having a specific dissolving rate and a quinonediazide group-contg. compd. CONSTITUTION:This compsn. is formed by incorporating the alkaline-soluble novolak resin having the dissolving rate in an aq. soln. of 8% tetramethyl ammonium hydroxide at 23 deg.C within a 50 to 1,000Angstrom /sec, the quinonediazide group- contg. compd. and alpha,alpha',alpha''-tris(4-hydroxyphenyl)-1, 3, 5-triisopropyl benzene into the compsn. The resist patterns having the excellent heat resistance and image contrast are formed in this way. The positive type photoresist compsn. which does not generate the scum in thus obtd. |
