| 摘要 |
PURPOSE:To oscillate visible rays reaching a short wavelength extending over 5,200Angstrom of a visible section by using a cadmium sulfide single crystal as a substrate crystal and successively forming an N type zinc selenium-telluride layer, a cadmium sulfide active layer and a P type zinc selenium-telluride layer onto the substrate crystal. CONSTITUTION:The three-layer structure of the N type ZnSe1-xTex clad layer 3 (x=0.35) having the same crystal orientation and lattice constant as CdS, the active layer 4 consisting of CdS having high purity or Zn1-yCdySe (y=0.401) having the same crystal orientation and lattice constant as the CdS having high purity, and the P type ZnSe1-xTex clad layer 5 (x=0.35) is shaped onto the face of the N type low resistance CdS single crystal 2 with a metallic electrode 1. When pulse-shaped currents are applied in the forward direction, the visible-ray oscillation semiconductor laser is obtained by an upper electrode 6 and resonator structure 7 by a cleavage plane. |
