| 摘要 |
PURPOSE:To obtain a semiconductor device which can be operated stably even if more high-density integration is performed by deflecting the current which is generated in the semiconductor material at a part between first and second conducting means toward a third conducting means. CONSTITUTION:A predetermined voltage (about 5V) is applied across an N<+> diffused layers 14 and 16. When the positive voltage is applied to a gate electrode 18, the track of the electrons discharged from the N<+> diffused layer 14 is changed into the side of the gate electrode 18 by static electricity between the layer 14 and the gate electrode 18. The electrons pass through the sufficiently close part of a charge collecting electrode 20, captured with the electric field of the charge collecting electrode 20 and absorbed into the charge collecting electrode 20. Therefore, current does not flow between the N<+> diffused layers 14 and 16 in this case. That is, this element can be used as a switching element by controlling the gate voltage VG which is applied to the gate electrode 18.
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