发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To improve the etching property, plating property, etc., of the resist by compounding a specific alkali-soluble novolak resin with the compsn. CONSTITUTION:This compd. is compounded with the alkali-soluble novolak resin (A) and a photosensitizer essentially consisting of naphthoquinine diazide sulfonate. The resin contg. 20 to 80wt.% o-cresol novolak resin (B) having a weight average mol. wt. (Mw) ranging 800 to 1,500 and the ratio MW/Mn between the mol. wt. Mw and number average mol. wt. (Mn) ranging 1.5 to 3.0 is used as the component A. The alkali-soluble novolak resin having the mol. wt. Mw within a 5,000 to 15,000 range is preferably incorporated as the novolak resin exclusive of the component B into the component A.
申请公布号 JPH03208055(A) 申请公布日期 1991.09.11
申请号 JP19900002434 申请日期 1990.01.11
申请人 TOKYO OHKA KOGYO CO LTD 发明人 UCHIGAWA KIYOSHI;KOMANO HIROSHI
分类号 G03F7/021;G03F7/023;H01L21/027 主分类号 G03F7/021
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