发明名称 X-RAY MASK, METHOD OF CORRECTING X-RAY MASK, AND X-RAY EXPOSURE SYSTEM
摘要 <p>PURPOSE:To make it possible to correct different defects such as a pinhole-like defect by providing correcting patterns which correct the pattern's defects of an X-ray absorbing layer of an X-ray mask on the back of a thin film transparent to X rays. CONSTITUTION:An X-ray absorber pattern 4 may includes pinhole-like defects 5 of high aspect ratio, defects 6 due to broken edges on the lower side of the pattern 4, and step-like defects 7 due to broken corners. A fine pattern 8 for correcting the defects 5-7 are formed corresponding to the defects 5-7 on the back of a thin film 2 transparent to X rays. That is, the X rays passing through the defects 5-7 of the pattern 4 are absorbed certainly by the correcting pattern 8, and do not reach a substance to be exposed. Thereby, the various defects of the pattern 4 formed on the surface of the thin film 2 are corrected surely.</p>
申请公布号 JPH03208329(A) 申请公布日期 1991.09.11
申请号 JP19900002484 申请日期 1990.01.11
申请人 TOSHIBA CORP 发明人 HORI MASARU;ITO MASAMITSU
分类号 G03F1/72;G03F1/74;G03F7/20;H01L21/027 主分类号 G03F1/72
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