| 摘要 |
A semiconductor device comprises: a semiconductor substrate, a semiconductor pillar 25 projecting from the semiconductor substrate, an insulating layer 27 formed on the circumferential surface of the semiconductor pillar 25, a conductive side wall 28 formed on the circumferential surface of the semiconductor pillar 25 over the insulating layer 27, an insulating layer 29,31 obtained by insulating a part of the conductive side wall in such a manner that the upper portion thereof is more insulated than other portions,an insulating layer 30 formed on the substrate so that the surface of the insulating layer surrounds the conductive side wall and is continuously and flatly arranged at the head portion surface of the semiconductor pillar, and a conductive pattern 32 forming an electrical contact with the head portion surface of the semiconductor pillar and electrically insulated from the conductive side wall 28. |
