| 摘要 |
<p>A fusible link (13) is fabricated using sidewall spacer technology. The fusible link (13) of the present requires low fusing power because a fusible link (13) having a small cross-sectional area is obtainable. A conductive or semiconductive, fusible sidewall spacer is formed around a platform (12) or in a well of a dielectric layer (11). Each fusible link (13) may have two fusible portions per site, resulting in a built-in redundancy. Alternatively, the packing density of the fusible links (13) may be increased by using each side of the fusible sidewall spacer as a fusible link (13). This process is compatible with bipolar and BICMOS processes used in fabricating high performance memory devices. <IMAGE></p> |
