发明名称 |
Semiconductor light emitting device |
摘要 |
A semiconductor light emitting device, especially, a light emitting diode includes a compound semiconductor substrate of a first conductivity type, an InGaAlP layer formed on the substrate and having a light emitting region, a GaAlAs layer of a second conductivity type formed on the InGaAlP layer and having a larger band gap than that of the InGaAlP layer, and an electrode formed on a part of the GaAlAs layer. The light emitting diode emits light from a surface at the electrode side except for the electrode. A current from the electrode is widely spread by the GaAlAs layer to widely spread a light emitting region.
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申请公布号 |
US5048035(A) |
申请公布日期 |
1991.09.10 |
申请号 |
US19900530120 |
申请日期 |
1990.05.29 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGAWARA, HIDETO;ISHIKAWA, MASAYUKI;KOKUBUN, YOSHIHIRO;NISHIKAWA, YUKIE;NARITSUKA, SHIGEYA |
分类号 |
H01L33/00;H01L33/14;H01L33/30;H01L33/38;H01S5/042;H01S5/183;H01S5/22;H01S5/30;H01S5/32;H01S5/343 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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