| 摘要 |
<p>PURPOSE:To completely detoxicate a large amt. of the org. semiconductor exhaust gas by bringing the exhaust gas into contact with activated carbon contg. a metal oxide. CONSTITUTION:When the org. semiconductor exhaust gas is detoxicated, the gas contg. the gaseous org. compd. selected from Si(OC2H5)4, As(OC2H5)3, P(OCH3)3 is firstly filled into a bubbling-type gas supply vessel 2. An inert gas is introduced into the vessel 2 from a bubbling carrier 3 to bubble the liquefied org. gas for the semiconductor, hence the liq. is gasified, and the gas is introduced into a treating cylinder 1 packed with the activated carbon contg. the metal oxide. The exhaust gas is then heated to 0-200 deg.C and introduced into the cylinder 1. As a result, the org. gas for the semiconductor as the exhaust gas is oxidized by the metal oxide in the activated carbon, and the formed oxide is simultaneously chemically adsorbed by the activated carbon.</p> |
