| 摘要 |
PURPOSE:To enhance a resistant property to soft errors by alpha-rays and to enhance a punchthrough breakdown strength by a method wherein the profile of a diffusion region on one side under a storage electrode is formed to be small. CONSTITUTION:A gate oxide film 3 is formed on an Si substrate 1; a poly-Si layer is deposited on it. After that, the poly-Si layer and the film 3 are patterned sequentially; a gate electrode 4 is formed. In succession, an N<-> layer 5 is formed on the surface part of the substrate 1 at side parts of the electrode 4. In addition, sidewalls 6 are formed on side faces of the electrode 4. Then, N<+> source- drain regions 7a, 7b coming into contact with the outside of the layer 5 are formed. Then, an SiO2 film 8 is formed; a contact hole 9 is opened on a prescribed region of the region 7a in the film 8. In addition, poly-Si is deposited on the whole surface; As is implanted into the poly-Si; a conductive property is endowed; an annealing operation is executed. After that, the poly-Si is patterned; a storage node electrode 10 is formed. At this time, impurities in the region 7a are diffused into the electrode 10; the region 7a is formed to be shallower than the region 7b. |
