Mononuclear and multinuclear phosphido, arsenido, and stibido complexes of aluminum, gallium and indium

摘要

The present invention involves chemical compounds particularly useful for the preparation of thin films or layers of group 3/group 5 materials by MOCVD and other techniques. Such compounds may be represented as having the formulas [M(ER'R'')3]n or [RM(ER'R'')2]n or [R2M(ER'R'')]n wherein M is aluminum, gallium or indium; E is phosphorus, arsenic or antimony; R, R', and R'' are one or more of hydrogen, alkyl, aryl, alkyl-substituted aryl, cyclic alkyl, halide or other anionic group; and n is between about 1 and about 6.