发明名称 OVERLAP EXPOSING METHOD FOR MANUFACTURE OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To always obtain an excellent accuracy by applying an ultrasonic ray, etc., finely converged by supplying ozone to a resist part on a reference mark, and locally removing the resist by evaporating. CONSTITUTION:A reference mark 2 on a semiconductor substrate 1 is covered with a resist 3, an ultraviolet ray or a charged beam finely converted by supplying ozone 6 is applied, the resist is locally completely burned and removed by evaporating. Accordingly, the resist is not dispersed as residue or the like therearound, but can be effectively favoritely removed, and then accurately aligned.
申请公布号 JPH03206607(A) 申请公布日期 1991.09.10
申请号 JP19900002828 申请日期 1990.01.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKEUCHI SUSUMU
分类号 H01L21/027 主分类号 H01L21/027
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