发明名称 |
Electro-optic quantum well device |
摘要 |
A quantum well semiconductor device that is responsive to optical energy and operates by resonant field ionization of quantum confined excitons and comprises a semiconductor device including a multi-layered semiconductor structure fabricated on the substrate and including at least two quantum well layers of mutually different widths separated from each other by a semiconductor barrier layer. Because of the different widths, the two quantum well layers have distinct and different electron and hole sub-band energies which when an external electric field is applied across the semiconductor structure, it is possible to bring the electron sub-bands of the wells into resonance, whereupon electrons tunnel back and forth through the barrier layer thereby altering the light absorption coefficient near the excitonic absorption feature. This mechanism provides a means to phase shift or modulate the light traversing through the device.
|
申请公布号 |
US5047822(A) |
申请公布日期 |
1991.09.10 |
申请号 |
US19880172518 |
申请日期 |
1988.03.24 |
申请人 |
MARTIN MARIETTA CORPORATION |
发明人 |
LITTLE, JR., JOHN W.;LEAVITT, RICHARD P. |
分类号 |
G02F1/015;G02F1/017;H01S5/00 |
主分类号 |
G02F1/015 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|