发明名称 |
Thin film infrared laser detector and monitor |
摘要 |
A detecting or monitoring device for laser radiation is able to oeprate at room temperature and employs a thin film of semi-conductor material of non-centrosymmetric lattice structure having a substantial crystallographic texture; thin film may suitably be tellurium in a film thickness of 1 to 100 mu m, supported on a substrate of single crystal silicon.
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申请公布号 |
US5047645(A) |
申请公布日期 |
1991.09.10 |
申请号 |
US19890376741 |
申请日期 |
1989.07.07 |
申请人 |
THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING |
发明人 |
GUNDJIAN, ARSHAVIR A.;BADAYE, MASSOUD |
分类号 |
G01J1/42;G01J5/28;H01L31/0272;H01L31/09 |
主分类号 |
G01J1/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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