发明名称 Thin film infrared laser detector and monitor
摘要 A detecting or monitoring device for laser radiation is able to oeprate at room temperature and employs a thin film of semi-conductor material of non-centrosymmetric lattice structure having a substantial crystallographic texture; thin film may suitably be tellurium in a film thickness of 1 to 100 mu m, supported on a substrate of single crystal silicon.
申请公布号 US5047645(A) 申请公布日期 1991.09.10
申请号 US19890376741 申请日期 1989.07.07
申请人 THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING 发明人 GUNDJIAN, ARSHAVIR A.;BADAYE, MASSOUD
分类号 G01J1/42;G01J5/28;H01L31/0272;H01L31/09 主分类号 G01J1/42
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