发明名称 SEMICONDUCTOR MEMORY CIRCUIT
摘要 <p>PURPOSE:To prevent stored and held data from being destroyed at the time of reading and to eliminate the necessity of a precharge operation by separating a write system and a read system and providing a read buffer and a transfer gate for read at the read system. CONSTITUTION:The write system and the read system are separated and a buffer 15, transfer gate 16, data terminal RD and address terminal RA are formed at the read system. When the address terminal RA is selected, the data in a memory holding circuit composed of inverter circuits 11 and 12 are outputted through the buffer 15 to the data terminal RD. In such a case, the terminal RD of a memory cell is connected through a digit line to the other plural data terminals and since the buffer 15 is provided, however, the stored and held data are not destroyed even in the case the capacitance of the digit line is large or the memory cells are competed each other since the terminal RA is selected at the plural memory cells. Then, the precharge operation is not required.</p>
申请公布号 JPH03207089(A) 申请公布日期 1991.09.10
申请号 JP19900001835 申请日期 1990.01.08
申请人 NEC CORP 发明人 SANO TOSHI
分类号 G11C11/41;H01L27/10 主分类号 G11C11/41
代理机构 代理人
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