| 摘要 |
PURPOSE:To enhance reliability without complicating a manufacturing process by laminating a conductive film of the same layer as a conductive film for forming one and the other electrodes of a capacity element on a contact part of a transistor with a bit line. CONSTITUTION:In a memory device having a memory cell formed of one transistor 12 and one capacity element 25, a first conductive film 17 of the same layer as a conductive film for forming one electrode of the element 25 is laminated on an impurity region 14a in a state in contact with the region 14a of the transistor 12, a second conductive film 23 of the same layer as a conductive film for forming the other electrode of the element 25 is laminated on the film 17 in a state in contact with the film 17, and a bit line 32 is connected to the film 17. |
