| 摘要 |
PURPOSE: To enhance bonding characteristics, conductivity, etching performance in plasma and reactive ion etchant, orientation of the lattice plane, oxidation resistance and diffusion resistance by forming a multilayer capacitor structure in an integrated circuit. CONSTITUTION: A first layer 20 promotes adhesion of a bottom electrode 14 to a substrate 12. A second layer 22 is formed on an adhesive layer 20 to constitute a diffusion barrier layer. A third layer 24 is an electric contact layer for connecting a capacitor 10 electrically with other devices and components on an integrated circuit. A fourth layer 26 is formed on another layer of the bottom electrode 14 as a plate layer serving as a nucleus forming layer for growing a dielectric. The bottom layer 30 of a second electrode 18 is a plate layer formed on a dielectric layer 16. A second layer 32 is formed on a plate layer 30 as a diffusion barrier layer serving as a second electric contact layer for forming a circuit or a connection with other components or devices located closely in an integrated circuit, for example. The third layer 34 of a top electrode 1 is formed on the second layer 32. |
