发明名称 PROCEDE DE FABRICATION DE PUCES DE CIRCUIT INTEGRE
摘要 A method is provided for making integrated circuit silicon composite die having a hot melt adhesive on the surface of its silicon base. An integrated circuit silicon wafer silicon composite die in wafer form is diced after a hot melt adhesive has been applied onto its silicon base utilizing a spin coating procedure. Integrated circuit silicon composite arrays are also provided by integrally bonding the integrated circuit silicon die onto a carrier substrate.
申请公布号 FR2576148(B1) 申请公布日期 1991.09.06
申请号 FR19860000343 申请日期 1986.01.13
申请人 GENERAL ELECTRIC CY 发明人 GARY CHARLES DAVIS
分类号 H01L21/52;H01L21/58;(IPC1-7):H01L21/78 主分类号 H01L21/52
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