| 摘要 |
PURPOSE:To moderate a stress which acts on an optical semiconductor element and to prevent it from deteriorating in brightness by a method wherein the optical semiconductor element is pre-dipped into an epoxy resin compound which contains thio- phosphite and then sealed up with epoxy resin compound which contains no thiophosphite. CONSTITUTION:An optical semiconductor device formed in such a manner that an optical semiconductor element is connected and fixed to a metal lead frame is dipped into an epoxy resin composition I which contains epoxy resin phtalate anhydride and thiophosphite to form an epoxy resin composition layer on the surface of the device. The optical semiconductor device coated with the epoxy resin composition layer is sealed up with an epoxy resin composition II which contains epoxy resin and phtalate anhydride to form an optical semiconductor sealed device. The epoxy resin composition II which seals up the optical semiconductor device is prevented from coming into direct contact with the surface of the semiconductor device to seal up, so that stress acting on the optical semiconductor sealed device induced by the composition II can be moderated to be small. As the pre-dipping composition I is basically equal to the sealing composition II in composition, an optical interface is prevented from being formed between the compositions I and II, so that they are transparent. |
