FIELD-EFFECT TRANSISTOR AND MANUFACTURE THEREOF,申请号JP19890342873-传众专利搜索

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发明名称	FIELD-EFFECT TRANSISTOR AND MANUFACTURE THEREOF
摘要
申请公布号	JPH03203336(A)	申请公布日期	1991.09.05
申请号	JP19890342873	申请日期	1989.12.29
申请人	NEC CORP	发明人	UENO KAZUYOSHI
分类号	H01L29/205;H01L21/338;H01L29/812	主分类号	H01L29/205
代理机构		代理人
主权项
地址

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