VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERVORRICHTUNG

摘要

A silicon substrate (20) having a pnpn structure is soldered to a metal plate (10). A silicon oxide film (16) is naturally formed on the side surface of the silicon substrate during a process of removing defective part of the side surface, and a metal component penetrates into the silicon oxide film. The silicon substrate is dipped into an etchant to etch the silicon oxide film, so that a leak current through the metal component is effectively prevented.