| 摘要 |
PURPOSE:To enable various kinds of patterns to be exposed by a method wherein multiple marks, including alignment mark and shot data marks, are made in one shot region on a semiconductor wafer while the alignment marks are detected during the contracted exposure process and then the shot requirements are selected by the shot data. CONSTITUTION:Alignment marks 7 and shot data marks 6 are made in respective shot regions by contact exposure process. Simultaneously with the detection of the marks 7, the other marks 6 are read-out to select the shot requirements as well as the exposure level is corrected by a controller 8 for effecting the step align exposure. The photoresist film is thicker in the outer peripheral part than in the central part, however, this film can be exposed in high yield since the thickness can be corrected by correction exposure data (a). Furthermore, the shot requirements can be selectively changed thereby enabling various contracted patterns to be exposed meeting different requirements by selecting specific reticle so that small quantity production of various kinds may be carried out efficiently in high yield. |
