| 摘要 |
<p>An optical semiconductor device and a manufacturing method thereof, more particularly, an optical semiconductor device having a mesa structure, such as a semiconductor laser, an optical modulator, an optical filter and a light receiving element, and a manufacturing method thereof. An object of this invention is to provide a mesa buried type optical semiconductor device whose structure can suppress the exposure of a surface (111)B that causes an abnormal growth when burying the both sides of a mesa structure. The mesa buried type optical semiconductor device is characterized in that it has a semiconductor multilayer (20) of the mesa type structure in which a second surface (11B) is positioned on a first surface (11A) provided on a semiconductor substrate (11) in the transverse direction of a side wall of the semiconductor multilayer (20), and a buried layer (16) which is provided so as to bury the first surface, the second surface and the side wall of the multilayer semiconductor layers (20).</p> |
