Semiconductor device having a reduced junction leakage.

摘要

A semiconductor device includes a semiconductor layer, an insulating film, a polysilicon film, and a plurality of high-impurity concentration regions. The semiconductor layer has a first conductive region and a second conductive region of a conductivity type opposite to that of the first conductive region. The insulating film is formed on the semiconductor layer having a plurality of small windows on at least said first conductive region. The polysilicon film covers the insulating film and is in contact with the semiconductor layer through the small windows. The plurality of high-impurity-concentration regions are formed corresponding to the small windows.