| 摘要 |
<p>A lateral MOS-controlled thyristor (MCT) structure (10) using a single MOS gate (17) for both turn-on and turn-off. By eliminating a parasitic lateral PNP transistor, through the addition of a high resistivity region (14) surrounding one output terminal, and adding a DMOS transistor (13,11,20) to a conventional thyristor structure, the maximum turn-off current limit is increased with lower forward voltage drop than that available in prior art lateral MCTs. <IMAGE></p> |
