| 摘要 |
<p>PURPOSE:To make possible an increase in the breakdown strengths of both P-channel and N-channel transistors in a C-MOS constitution by a method wherein a low-concentration drain layer, which has an interval between the low-concentration drain layer and an Si3N4 film pattern at the ends of the channels of the transistors and includes a high concentration drain layer, is formed. CONSTITUTION:A first low-concentration drain layer 5 is formed by a self- alignment ion-implantation of boron using an Si3H4 film as a mask. Subsequently, a second low-concentration drain layer 7, which has an interval of 0.5 to 2.0mum between the layer 7 and the Si3N4 film pattern 3 at the ends of channels and includes a high-concentration drain layer, is formed by an ion-implantation using a resist pattern 6 as a mask. As the layer 7 includes completely the highconcentration drain layer, an increase in a breakdown strength of 60V or higher becomes possible and as the resistance of the layer 7 can be made small, a gm can be increased. Moreover, in the case of a C-MOS constitution, an increase in the breakdown strengths of both P-channel and N-channel MOS transistors can be realized.</p> |
