Integrated circuit in complementary circuit technology comprising a substrate bias voltage generator

摘要

An integrated circuit in complementary circuit technology comprises a substrate bias voltage generator which reverse biases the substrate, into which tubs of opposite conductivity are inserted. The source regions of the field effect transistors arranged in the substrate lie at ground potential. In order to avoid "latch-up" effects, the output of the substrate bias voltage generator is connected by way of an electronic switch to a circuit point lying at ground potential, whereby the switch is driven via the output of the substrate bias voltage generator.