| 摘要 |
PURPOSE:To decrease an effective voltage applied to a sensitive layer which detects radiation and to prevent a leakage current from increasing sharply due to the injection of carrier when a voltage is applied by a method wherein the surface of a compound semiconductor crystal is etched to remove the processing affected layer, and a platinum electrode is formed through an electroless plating method using a water solution which contains hexachloroplatinate. CONSTITUTION:When a compound semiconductor crystal 2 is irradiated with radiations, electron - hole pairs are formed. The electron - hole pairs are accelerated by a bias voltage to reach to an electrode and turn into an ionization current, a direct current component is removed from the ionization current concerned through a capacitor, the direct component removed ionization current is amplified and outputted as an output signal. At this point, the processing affected layer of high resistance introduced by a lapping or a polishing process is removed by etching so as not to enable an effective voltage applied to a sensing layer of compound semiconductor crystal to decrease to be much smaller than an applied voltage. A metal electrode is formed of platinum through an electroless plating method. This method is employed so as to prevent a leakage current from increasing sharply due to the injection of carriers when a voltage is applied.
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