发明名称 |
Method for manufacturing a DRAM using selective epitaxial growth on a contact |
摘要 |
A method for manufacturing a semiconductor device includes forming contact holes in insulating layers to expose an impurity doped region of a semiconductor substrate. An epitaxial layer is then grown in the contact hole. A polycrystalline silicon layer is formed over the top to provide the lower electrode of a capacitor. Accordingly, the polycrystalline layer is separated from the impurity doped region thereby preventing current leakage.
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申请公布号 |
US5045494(A) |
申请公布日期 |
1991.09.03 |
申请号 |
US19900494185 |
申请日期 |
1990.03.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, DO-CHAN;KIM, KYUNG-TAE |
分类号 |
H01L27/04;H01L21/02;H01L21/285;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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