SEMICONDUCTOR CONTACT WINDOW FILLING - UP METHOD

摘要

The method for minimising the contact variation formed on the stepped surface after photo etching and preventing the misalignment of the etching process by using the lift off process comprises steps; a) forming the plain and intermediate layers on the stepped non-conductive layer; b) forming the contact by spreading the photo resist; c) etching the intermediate and plain layers along the contact pattern; d) etching the photo resist layer corresponding to the contact area with the mask; e) under cutting the plain layer and removing the residual photo resist; f) spreading the metal on the contact and intermediate layer; g) removing the metal spread on the plain and intermediate layers with the lift off process; and h) connecting.