| 发明名称 |
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| 摘要 |
A semiconductor superlattice is provided with a one-dimensional quantum pipeline type carrier path. The pipeline is formed at the intersection of different energy level layers of the superlattice. Conductivity modulation through an adjacent exposed surface is employed for control in the pipeline and in arrays thereof. The pipeline carrier path involves both electrons and holes. A structure of Ga1-xAlxAs with alternating 100 ANGSTROM and 500 ANGSTROM thick layers of different x has positioned, intersecting those layers, a 100 ANGSTROM thick GaAs layer covered by a GaAlAs layer. Control and contacting electrodes are positioned on the exposed surfaces. |
| 申请公布号 |
JPH0357627(B2) |
申请公布日期 |
1991.09.02 |
| 申请号 |
JP19860162209 |
申请日期 |
1986.07.11 |
| 申请人 |
INTAANASHONARU BIJINESU MASHIINZU CORP |
发明人 |
REROI RIIGONGU CHANGU;REO ESAKI |
| 分类号 |
H01L29/812;H01L21/20;H01L21/338;H01L27/00;H01L29/06;H01L29/12;H01L29/15;H01L29/775;H01L29/778;H01L29/80 |
主分类号 |
H01L29/812 |
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