| 摘要 |
PURPOSE:To perform drawing of high precision at a charged particle beam exposure device by a method wherein the storage time signal of an amplifier corresponding to shot time is read from a memory according to a signal designating the shot time thereof, subtraction is performed, and applied to a blanking electrode through the amplifier. CONSTITUTION:Shot information sent from a CPU12 is processed 13, time information is sent to a register 14, electron beam size information is converted 15 according to D/A conversion, and amplifier 16 to be sent to a deflector 6, shot position information is converted 17 according to D/A conversion, and amplified 18 to be sent to a deflector 9. Storage time information t0 corresponding to shot time information is read from a memory 19 making the highest rank bit of the shot time information T of the register 14 as an address, and after subtraction 21 is performed, a pulse T'' is generated 22. An amplifier 20 extends input shot time by the amount of the storage time t0, and applys the pulse of the prescribed shot time duration T to a blanking electrode 10. An influence to be generated according to the storage time of the amplifier in the shot signal applied to the blanking electrode is substantially removed, and a pattern of high precision can be drawn. |
