发明名称 DIE BONDING METHOD
摘要 PURPOSE:To increase adhesion to a package and improve endurance to fatigue and creep, by eliminating a natural oxide film on the rear of a silicon chip just before die bonding. CONSTITUTION:A natural oxide film 2 formed in the manufacturing process of the rear of a silicon chip 1 hinders die bonding. When the film is eliminated in an early stage, it may be again formed, and therefore the whole part or the almost whole part is eliminated by a laser beam 7 from a laser light source 6, just before die bonding at the time of mounting an element. The silicon chip 1 whose oxide film 2 is exfoliated is mounted on a pedestal part of a package 5 on which Au 4 is previously deposited, and heated at a temperature of about 370 deg.C. Thereby Au-Si eutectic reaction layer 3 is formed, which is subjected to natural cooling and hardened.
申请公布号 JPH03198351(A) 申请公布日期 1991.08.29
申请号 JP19890336457 申请日期 1989.12.27
申请人 KAWASAKI STEEL CORP 发明人 OKA SHINSUKE
分类号 H01L21/52 主分类号 H01L21/52
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