EIN-TRANSISTOR-SPEICHERZELLENANORDNUNG UND VERFAHREN ZU DEREN HERSTELLUNG

摘要

The invention relates to a one-transistor storage-cell device and a method for making the same, in particular for VLSI dynamic semiconductor memories. The storage-cell device according to the invention is essentially characterised in that the storage electrode consists of conducting lamellae arranged perpendicular to the substrate surface on a common conducting base-plate, in that a storage dielectric covers the storage electrode except for the underside of the base-plate, in that a cell plate encloses the storage electrode in a serrated manner, the spacings between the adjacent lamellae being completely filled and the base-plate and storage cell regions covered with storage dielectric and adjacent to the outermost lamella are also covered by the cell plate, and in that perforations are provided at the contact points in the cell plate necessitated by the design.