| 摘要 |
PURPOSE:To prevent the lowering of sensibility by executing the developing treatment of a resist pattern at a high temperature of 30-40 deg.C. CONSTITUTION:A semiconductor substrate having a positive type resist exposed through a mask pattern and a developer are kept at 30-40 deg.C and developing is conducted in the developing treatment of a resist pattern in a lithographic process transferring the mask pattern. That is, resolution and resist-shaped rectangular properties are improved by comparison by the same resist by conducting developing treatment at a high temperature of 30-40 deg.C. High resolution can be acquired even by the resist having low sensitizing-agent concentration. Accordingly, the excellent resist pattern can be formed keeping the sensibility high. |
