| 摘要 |
PURPOSE:To stabilize the non-crystalline state in a recording layer, to increase crystallization speed, to further enlarge a reproducing signal and to accelerate the formation of stable non-crystalline and crystalline states by providing the recording layer based on an alloy prepared by adding a proper amount of a specific element to an In-Sb alloy and forming an inorg. dielectric protective layer containing Al, O and N as main components. CONSTITUTION:A data recording medium has a substrate, a recording layer generating the change of atomic arrangement by the irradiation with laser beam and the inorg. dielectric protective layer arranged on the single side or both sides of the recording layer. The recording layer is based on an alloy having a composition represented by general formula (InxSb100-x)100-aCha (wherein Ch is one or more element selected from Se, Te and S, (a) and (x) are atomic %, (a) is 20 < (a) < 60 and (x) is 20 <= (x) <= 80) and the inorg. dielectric protective layer contains Al, O and N as main components. By this constitution, the data recording medium having high erasing speed, enhanced in the stability of a recording state and having a large reproducing signal and high recording sensitivity can be obtained. |
