PREPARATION OF SUBSTRATE FOR DEPOSITING DIAMOND THIN FILM

摘要

PURPOSE:To improve the crystallizing and orientating properties of a diamond thin film by injecting ions containing at least carbon ions into a silicon substrate and subsequently etching the silicon substrate to expose the formed silicon carbide layer. CONSTITUTION:A hydrocarbon gas is fed into a discharging chamber 401 having an electrode for a high frequency power source 405 on the outside thereof and electromagnets 407, 408 at the center thereof through a feeding tube 404 from a gas bomb 403 to subject the hydrocarbon gas to a discharging decomposition reaction, and the produced carbon ions 102 are accelerated with a direct current voltage source 409 and subsequently irradiated on and injected into a silicon substrate 411 placed on a base plate 412 for the substrate to form a silicon- carbide layer 103, followed by etching the substrate.