发明名称 |
Fine processing method using oblique metal deposition. |
摘要 |
<p>A resist pattern having a prescribed opening is formed over a semiconductor substrate through an insulative layer. A Ti film is formed, by oblique vacuum vapor deposition, on the resist pattern and on part of the area of the insulative layer which constitutes the bottom surface of the resist opening. The insulative film is etched using the Ti film as a mask to form a groove through the insulative layer.</p> |
申请公布号 |
EP0443348(A2) |
申请公布日期 |
1991.08.28 |
申请号 |
EP19910101232 |
申请日期 |
1991.01.30 |
申请人 |
ROHM CO., LTD. |
发明人 |
NAKAGAWA, YOSHIKAZU, ROHM CO., LTD. |
分类号 |
H01L21/302;H01L21/3065;H01L21/311;H01L21/338;H01L29/812 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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