| 发明名称 |
Metal-semiconductor ohmic contact forming process. |
| 摘要 |
<p>The process consists of enrichment of the surface of the semiconductor on which the contact is to be formed, by ion implantation of dopant, followed by deposition of a metal film on the implanted surface and then by thermal annealing at a temperature considerably lower than 500 DEG C and for a period considerably shorter than 60 minutes. <IMAGE></p> |
| 申请公布号 |
EP0443297(A1) |
申请公布日期 |
1991.08.28 |
| 申请号 |
EP19900830063 |
申请日期 |
1990.02.20 |
| 申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
SANTANGELO, ANTONELLO;MAGRO, CARMELO;FERLA, GIUSEPPE;LANZA, PAOLO |
| 分类号 |
H01L21/265;H01L21/28;H01L21/285;H01L21/329;H01L21/768 |
主分类号 |
H01L21/265 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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