发明名称 |
Semiconductor device with functional portions having different operating voltages on one semiconductor substrate |
摘要 |
A single chip microcomputer as a semiconductor device comprises CMOS logic portion and a driver portion operating at a high voltage which can be connected to an external device. In the region of the CMOS logic portion, a P type well layer and an N type well layer are formed on a P type silicon substrate. An N type well layer is formed in the region constituting the driver portion. The junction depth of the N type well layer constituting the driver portion is made deeper than that of the N type well layer constituting the CMOS logic portion. A MOS transistor is formed in the region of each well layer in the CMOS logic portion. A MOS transistor whose drain breakdown voltage is increased is formed in the region of the N type well layer of the driver portion. The junction depth of the N type well layer is made deeper than that of the N type well layer constituting the CMOS logic portion at least below the drain region of this MOS transistor. The MOS transistor constituting the CMOS logic portion operates at a lower voltage while the MOS transistor constituting the driver portion operates at a higher voltage in order to drive external devices such as a fluorescent display tube connected thereto.
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申请公布号 |
US5043788(A) |
申请公布日期 |
1991.08.27 |
申请号 |
US19890396501 |
申请日期 |
1989.08.21 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OMOTO, KAYOKO;MIYATA, KAZUAKI |
分类号 |
H01L27/06;H01L27/092 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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