| 摘要 |
<p>PURPOSE:To obtain the SiC film having excellent high energy beam resistance by forming the SiC film in the state of compressive stress on a substrate, then annealing the film into the state of tensile stress. CONSTITUTION:The SiC film is formed in the state of the compressive stress on the substrate by using a target consisting of SiC and by a sputtering method. This film is then annealed to the state of the tensile stress. Namely, the SiC film is required to contain crystalline SiC. The film is formed by previously imparting crystallinity to the film at the time of a sputtering treatment for the above-mentioned purpose, by which the fluctuation in the stress and the generation of strains are lessened even if the film is irradiated with a high- energy beam at the time of use of the film as a mask. The SiC film which has the tensile stress of a specified range and has the crystallinity regulated by the waveform of X-ray diffraction is obtd. in this way. The excellent SiC film which has the high energy beam resistance, is extremely little in the change in the stress and is free from pinholes and nodules is stably mass-produced without fluctuations.</p> |
