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发明名称
Process for forming electrodes for semiconductor devices by focused ion beam technology
摘要
申请公布号
US5043290(A)
申请公布日期
1991.08.27
申请号
US19890338274
申请日期
1989.04.14
申请人
MITSUBISHI DENKI KABUSHIKI KAISHA
发明人
NISHIOKA, TADASHI;MASHIKO, YOJI;MORIMOTO, HIROAKI;KOYAMA, HIROSHI
分类号
H01L21/768
主分类号
H01L21/768
代理机构
代理人
主权项
地址
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