发明名称
摘要 PURPOSE:To maintain close adhesion of a photoconductive layer good and to lower residual potential after exposure by regulating a barrier layer under a surface porous layer in an anodized film to a specified thickness or less. CONSTITUTION:The deterioration of electric characteristics is mainly due to comparatively high resistance of the barrier layer formed inevitably in the lower layer of the anodized film. The barrier layer 2a under the surface porous layer 2b in the film 2 is regulated to a thickness t1 of <=10nm in an electrophotographic sensitive body obtained by forming the photoconductive layer 3 on a conductive substrate 1 made of Al provided with the anodized film 2 as a interface on the surface of the substrate 1. The film 2 having such a barrier layer 2a can be obtained by favorably adopting low voltage electrolytic, multistage electrolytic, and high temp. high concd. bath electrolytic methods.
申请公布号 JPH0355817(B2) 申请公布日期 1991.08.26
申请号 JP19850039918 申请日期 1985.02.28
申请人 发明人
分类号 C25D11/04;C25D11/08;C25D11/12;G03G5/02;G03G5/10;G03G5/14 主分类号 C25D11/04
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