THERMAL CLEANING METHOD OF SI SUBSTRATE; EPITAXIAL GROWTH AND HEAT TREATMENT APPARATUS,申请号JP19890335698-传众专利搜索

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发明名称	THERMAL CLEANING METHOD OF SI SUBSTRATE; EPITAXIAL GROWTH AND HEAT TREATMENT APPARATUS
摘要
申请公布号	JPH03195016(A)	申请公布日期	1991.08.26
申请号	JP19890335698	申请日期	1989.12.25
申请人	NIPPON TELEGR & TELEPH CORP <NTT>	发明人	ITO YOSHIO;MORI HIDEFUMI
分类号	H01L21/205;H01L21/304	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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